TEMPERATURE DEPENDENCE OF ANHARMONIC EXAFS OSCILLATION OF CRYSTALLINE SILICON

Authors

  • Tien Tong Sy Department of Basic Sciences, University of Fire
  • Hoang Le Viet Department of Physics, Hanoi University of Science

DOI:

https://doi.org/10.51453/2354-1431/2020/435

Keywords:

EXAFS analysis; Debye-Waller factor; Anharmonic correlated Einstein model; Crystalline silicon.

Abstract

In this work, the anharmonic extended X-ray absorption fine structure (EXAFS) oscillation of crystalline silicon (c-Si) is presented in terms of the Debye-Waller factor using the cumulant expansion approach up to the fourth-order. The first four EXAFS cumulant has been calculated based on the classical anharmonic correlated Einstein (ACE) model and suitable analysis procedure, in which thermodynamic parameters are derived from the anharmonic effective potential obtained using the first shell near-neighbor contribution approach. The analysis of the temperature dependence of the EXAFS oscillation is performed via evaluating the influence of the cumulants on the amplitude reduction and the phase shift of the anharmonic EXAFS oscillation. The numerical results are found to be in good agreement with those obtained using the quantum ACE model and experiments at various temperatures. The obtained results are useful in analyzing the experimental EXAFS data of c-Si.

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References

[1] F.W. Lytle, D.E. Sayers, E.A. Stern, Extended x-ray-absorption fine-structure technique. II. Experimental practice and selected results, Phys. Rev. B 11 (1975) 4825-4835.

[2] G. Beni and P.M. Platzman, Temperature and polarization dependence of extended x-ray absorption fine-structure spectra, Phys. Rev. B 14 (4) (1976) 1514-1518.

[3] J.J. Rehr and R.C. Albers, Theoretical approaches to x-ray absorption fine structure, Rev. Mod. Phys. 72 (3) (2000) 621-654.

[4] G. Bunker, Applications of the ratio method of EXAFS analysis to disordered systems, Nucl. Instrum. Methods 207 (1983) 437-444.

[5] N.V. Hung, T.S. Tien, N.B. Duc, D.Q. Vuong, High-order expanded XAFS Debye-Waller factors of HCP crystals based on classical anharmonic correlated Einstein model, Mod. Phys. Lett. B 28 (21) (2014) 1450174.

[6] N.V. Hung and J.J. Rehr, Anharmonic correlated Einstein-model Debye-Waller factors, Phys. Rev. B 56 (1) (1997) 43-46.

[7] E.A. Stern, P. Livins, Z. Zhang, Thermal vibration and melting from a local perspective, Phys. Rev. B 43 (11) (1991) 8850-8860.

[8] T.S. Tien, N.V. Hung, N.T. Tuan, N.V. Nam, N.Q. An, N.T.M. Thuy, V.T.K. Lien, N.V. Nghia, High-order EXAFS cumulants of diamond crystals based on a classical anharmonic correlated Einstein model, J. Phys. Chem. Solids 134 (2019) 307-312.

[9] T.S Tien, Advances in studies of the temperature dependence of the EXAFS amplitude and phase of FCC crystals, J. Phys. D: Appl. Phys. 53 (2020) 315303.

[10] T. Yokoyama, K. Kobayashi, T. Ohta, A. Ugawa, Anharmonic interatomic potentials of diatomic and linear triatomic molecules studied by extended x-ray-absorption fine structure, Phys. Rev. B 53 (10) (1996) 6111-6122.

[11] L.A. Girifalco and V.G. Weizer, Application of the Morse potential function to cubic metals, Phys. Rev. 114 (3) (1959) 687-690.

[12] V.V. Hung and H.K. Hieu, Study the Temperature Dependence of EXAFS Cumulants of Si and Ge by the Anharmonic Correlated Einstein Model, Commun. Phys. 21 (1) (2011) 25-34.

[13] M. Benfatto, C.R. Natoli, A. Filipponi, Thermal and structural damping of the multiple-scattering contributions to the x-ray-absorption coefficient, Phys. Rev. B 40 (14) (1989), 9626-9635.

[14] R.A.Swalin, Theoretical calculations of the enthalpies and entropies of diffusion and vacancy formation in semiconductors, J. Phys. Chem. Solids 18 (4) (1961) 290-296.

[15] N.V. Hung, C.S. Thang, N.B. Duc, D.Q. Vuong, T.S. Tien, Temperature dependence of theoretical and experimental Debye-Waller factors, thermal expansion and XAFS of metallic Zinc, Physica B 521 (2017)198-203.

Published

2021-07-02

How to Cite

Tống Sỹ , T., & Lê Việt , H. (2021). TEMPERATURE DEPENDENCE OF ANHARMONIC EXAFS OSCILLATION OF CRYSTALLINE SILICON. SCIENTIFIC JOURNAL OF TAN TRAO UNIVERSITY, 6(19), 95–102. https://doi.org/10.51453/2354-1431/2020/435

Issue

Section

Natural Science and Technology